SD553C30S50L Datasheet, PDF (5/8 Pages) Vishay Siliconix – Fast Recovery Diodes (Hockey PUK Version), 560 A

SD553C..S50L Series
Fast Recovery Diodes _{Vishay High Power Products}
(Hockey PUK Version), 560 A
4 00
3 50
3 00
2 50
2 00
1 50
1 00
50
0
0
V
FP
I
T_J = 1 2 5°C
T_J = 2 5°C
SD 55 3C ..S 50L S eries
200 400 600 800 1000 1200 1400 1600 1800 2000
R at e O f R ise O f Fo rw a rd C u rre n t - d i/d t ( A / us)
Fig. 11 - Typical Forward Recovery Characteristics
1 0 .5
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
4
10
SD 5 5 3 C ..S5 0 L Se rie s
T_J = 1 2 5 ° C ; V _r > 1 0 0 V
I _FM = 1500 A
Sin e Pu lse
1000 A
500 A
1 00
10 0 0
Rate O f Fa ll O f Forw ard Current - d i/dt ( A/µs)
Fig. 12 - Recovery Time Characteristics
8 00
I _FM = 1 5 00 A
7 00
Sin e Pulse
1000 A
6 00
500 A
5 00
4 00
3 00
2 00
1 00
0
0
SD 5 5 3 C ..S5 0 L S e r ie s
T_J = 1 2 5 °C ; V r > 1 0 0 V
50 100 150 200 250 300
R ate O f Fall O f Fo rwa rd Current - di/dt (A /µs)
Fig. 14 - Recovery Current Characteristics
25 0 0
20 0 0
15 0 0
I _FM= 1500 A
Sine Pulse
1000 A
500 A
10 0 0
50 0
0
0
SD 553C ..S5 0L S eries
T_J = 1 2 5 °C ; V _r > 1 0 0 V
50 100 150 200 250 300
Rate O f Fall O f Fo rward C urre nt - di/dt ( A/µs)
Fig. 13 - Recovery Charge Characteristics
1E4
10 joules per pulse
6
4
2
1
0 .8
1E3
0 .6
0.4
0 .2
1E2
1E1
SD 553C ..S50L S eri es
Sinu soid al Pu lse
TJ = 1 25° C , V RRM= 1 5 0 0 V
tp
d v/d t = 1000V/ µ s
1E2
1E 3
Pulse Basewidth (µs)
1E 4
Fig. 15 - Maximum Total Energy Loss
Per Pulse Characteristics
Document Number: 93177
Revision: 14-May-08
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