IRFP460 Datasheet, PDF (6/8 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated

IRFP460, SiHFP460
Vishay Siliconix
2400
2000
1600
Top
Bottom
I_D
8.9 A
13 A
20 A
1200
800
400
0 ^{VDD = 50 V}
25
50
75
100
125
150
91237_12c
Starting T_J, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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6
Document Number: 91237
S-81360-Rev. A, 28-Jul-08