IRFP460 Datasheet, PDF (4/8 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated

IRFP460, SiHFP460
Vishay Siliconix
10 000
8000
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
C_rss = C_gd
C_oss = C_ds + C_gd
6000
C_iss
4000
2000
0
10⁰
91237_05
C_oss
C_rss
10¹
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10²
150 °C
25 °C
10¹
0.6
91237_07
V_GS = 0 V
0.8 1.0 1.2 1.4 1.6 1.8 2.0
V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
I_D = 20 A
16
V_DS = 400 V
V_DS = 250 V
12
V_DS = 100 V
8
4
0
0
91237_06
For test circuit
see figure 13
40
80
120
160
200
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10³
Operation in this area limited
5
by R_DS(on)
2
10²
5
10 µs
2
10
5
2
1
1
91237_08
100 µs
T_C = 25 °C
T_J = 150 °C
Single Pulse
1 ms
10 ms
2
5
2
10
5 ₁₀₂ 2
5 ₁₀₃
V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 91237
S-81360-Rev. A, 28-Jul-08