IRFP27N60K Datasheet, PDF (6/8 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A)

IRFP27N60K, SiHFP27N60K
Vishay Siliconix
950
ID
TOP
13A
18A
760
BOTTOM
28A
570
380
190
0
25
50
75
100
125
150
Starting Tj, Junction Temperature ( ^° C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
V_GS
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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6
Document Number: 91219
S-Pending-Rev. B, 12-Jun-08