IRFP27N60K Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A)

IRFP27N60K, SiHFP27N60K
Vishay Siliconix
100000
10000
V_GS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
100
Crss
10
1
10
100
1000
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
12
ID = 28A
10
V_DS = 480V
V_DS = 300V
V_DS = 120V
7
5
2
0
0
30
60
90
120
150
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
10
T _J= 150 ^° C
1
T _J= 25 ° C
V _GS= 0 V
0.1
0.2
0.5
0.8
1.1
1.4
V _SD,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
10
100
10msec
1000
10000
V_DS , Drain-toSource Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 91219
S-Pending-Rev. B, 12-Jun-08