IRFB16N60L Datasheet, PDF (6/8 Pages) International Rectifier – SMPS MOSFET

IRFB16N60L, SiHFB16N60L
Vishay Siliconix
5.0
4.5
4.0
3.5
ID = 250μA
3.0
2.5
2.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig. 13 - Threshold Voltage vs. Temperature
600
ID
500
TOP 7.2A
10A
BOTTOM 16A
400
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig. 14a - Maximum Avalanche Energy vs. Drain Current
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6
15 V
V_DS
L
Driver
R_G
20 V
t_p
D.U.T.
I_AS
0.01 Ω
+
- ^VD^AD
Fig. 14b - Unclamped Inductive Test Circuit
V_DS
t_p
I_AS
Fig. 14c - Unclamped Inductive Waveforms
V_GS
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 15a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 15b - Gate Charge Test Circuit
Document Number: 91097
S-Pending-Rev. A, 03-Jun-08