IRFB16N60L Datasheet, PDF (5/8 Pages) International Rectifier – SMPS MOSFET

1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100μsec
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
10msec
1
10
100
1000
10000
VDS, Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
V_DS
V_GS
R_G
R_D
D.U.T.
+- _VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 11a - Switching Time Test Circuit
IRFB16N60L, SiHFB16N60L
Vishay Siliconix
18
16
14
12
10
8
6
4
2
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig. 10 - Maximum Darin Current vs. Case Temperature
V_DS
90 %
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 11b - Switching Time Waveforms
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
P _DM
t₁
t₂
Notes:
1. Duty factor D =
t₁/ t ₂
2. Peak T _J = P _DM x Z _thJC + T _C
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91097
S-Pending-Rev. A, 03-Jun-08
www.vishay.com
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