IRFB11N50A Datasheet, PDF (6/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=11A)

IRFB11N50A, SiHFB11N50A
Vishay Siliconix
600
ID
TOP
4.9A
500
7.0A
BOTTOM 11A
400
300
200
100
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
660
640
620
600
580
0.0
1.0 2.0 3.0 4.0 5.0 6.0
I _av , Avalanche Current (A)
A
7.0
Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche
Current
10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
D.U.T.
+
-^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91094
S-81243-Rev. B, 21-Jul-08