English
Language : 

IRFB11N50A Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=11A)
◁
IRFB11N50A, SiHFB11N50A
Vishay Siliconix
THERMAL RESISTANCE
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
RthJA
RthCS
RthJC
TYP.
-
0.50
-
MAX.
62
-
0.75
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
500
VDS = VGS, ID = 250 µA
2.0
VGS = ± 30 V
-
VDS = 500 V, VGS = 0 V
-
VDS = 400 V, VGS = 0 V, TJ = 150 °C
-
VGS = 10 V
ID = 6.6 Ab
-
VDS = 50 V, ID = 6.6 A
6.1
-
-
V
-
4.0
V
-
± 100 nA
-
25
µA
-
250
-
0.52
Ω
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Ciss
Coss
Crss
Coss
Coss eff.
VGS = 0 V,
-
1423
-
VDS = 25 V,
-
208
-
f = 1.0 MHz, see fig. 5
-
8.1
-
pF
VDS = 1.0 V, f = 1.0 MHz
-
2000
-
VGS = 0 V VDS = 400 V, f = 1.0 MHz -
55
-
VDS = 0 V to 400 V
-
97
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
-
52
ID = 11 A, VDS = 400 V
Qgs
VGS = 10 V
see fig. 6 and 13b
-
-
13
nC
Qgd
-
-
18
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
td(on)
tr
td(off)
tf
VDD = 250 V, ID = 11 A
RG = 9.1 Ω, RD = 22 Ω, see fig. 10b
-
14
-
-
35
-
ns
-
32
-
-
28
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
11
A
-
-
44
Body Diode Voltage
VSD
TJ = 25 °C, IS = 11 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
trr
-
TJ = 25 °C, IF = 11 A, dI/dt = 100 A/µsb
510
770
ns
Body Diode Reverse Recovery Charge
Qrr
-
3.4
5.1
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss effective is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
www.vishay.com
2
Document Number: 91094
S-81243-Rev. B, 21-Jul-08
 ▷