IRF710S Datasheet, PDF (6/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF710S, SiHF710S
Vishay Siliconix
V_DS
Vary t_p to obtain
required I_AS
R_g
10 V
t_p
L
D.U.T
I_AS
0.01 Ω
+
- ^{V DD}
Fig. 12a - Unclamped Inductive Test Circuit
V_DS
V_DS
t_p
V_DD
I_AS
Fig. 12b - Unclamped Inductive Waveforms
300
I_D
Top 0.89 A
250
1.3 A
Bottom 2.0 A
200
150
100
50
0 ^{VDD = 50 V}
25
50
75
100
125
150
91042_12c
Starting T_J, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91042
S11-1048-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000