IRF710S Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF710S, SiHF710S
Vishay Siliconix
400
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
C_rss = C_gd
300
C_oss = C_ds + C_gd
C_iss
200
100
C_oss
C_rss
0
10⁰
91042_05
10¹
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10⁰
150 °C
25 °C
10^-1
0.4
91042_07
V_GS = 0 V
0.6
0.8
1.0
1.2
1.4
V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 _{ID = 2.0 A}
16
V_DS = 320 V
V_DS = 200 V
12
V_DS = 80 V
8
4
0
0
91042_06
For test circuit
see figure 13
2
4
6
8
10 12
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10²
Operation in this area limited
5
by R_DS(on)
2
10
5
2
1
5
2
0.1
1
91042_08
100 µs
1 ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
10 ms
2
5 ₁₀ 2
5 ₁₀₂ 2
5 ₁₀₃
V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91042
S11-1048-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000