GA200TS60UPBF Datasheet, PDF (6/9 Pages) Vishay Siliconix – 'Half-Bridge' IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A

GA200TS60UPbF
Vishay High Power Products ^{"Half-Bridge" IGBT INT-A-PAK}
(Ultrafast Speed IGBT), 200 A
Fig. 15a - Test Circuit for Measurement of I_LM,
E_on, E_off(diode), t_rr, Q_rr, I_rr, t_d(on), t_r, t_d(off), t_f
+Vge
90% Vge
Vce
Ic ^{10% Vce}
td(off)
90% Ic
Ic
5% Ic
tf
t1+5µS
∫ Eoff = Vce ic dt
t1
Vce Ic dt
t1
t2
Fig. 15b - Test Waveforms for Circuit of Fig. 18a,
Defining E_off, t_d(off), t_f
10% +Vg
GATE VOLTAGE D.U.T.
+Vg
Vce
10% Ic
Vcc
90% Ic
td(on)
5% Vce
tr
t1
DUT VOLTAGE
AND CURRENT
Ipk
Ic
Vce Ic dt
t2
∫ Eon = Vce ie dt
t1
t2
Fig. 15c - Test Waveforms for Circuit of Fig. 18a,
Defining E_on, t_d(on), t_r
trr
Ic
tx
10% Vcc
Vpk
Irr
DIODE REVERSE
RECOVERY ENERGY
t3
Ic dt _trr
∫ Qrr = id dt
tx
10% Irr
Vcc
DIODE RECOVERY
WAVEFORMS
Vd Ic dt
t4
∫ Erec = Vd id dt
t3
t4
Fig. 15d - Test Waveforms for Circuit of Fig. 18a,
Defining E_rec, t_rr, Q_rr, I_rr
Vg GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
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6
t0
t1 t2
Fig. 15e - Macro Waveforms for Figure 18a's Test Circuit
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Document Number: 94545
Revision: 04-May-10