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GA200TS60UPBF Datasheet, PDF (1/9 Pages) Vishay Siliconix – 'Half-Bridge' IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A
GA200TS60UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 200 A
INT-A-PAK
FEATURES
• Generation 4 IGBT technology
• Ultrafast: Optimized for high speed 8 kHz to
40 kHz in hard switching, > 200 kHz in resonant
mode
• Very low conduction and switching losses
• HEXFRED® antiparallel diodes with ultrasoft recovery
• Industry standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 200 A, 25 °C
600 V
265 A
1.74 V
BENEFITS
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, welding
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Peak switching current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
ICM
ILM
IFM
VGE
VISOL
Maximum power dissipation
PD
TEST CONDITIONS
TC = 25 °C
TC = 67 °C
Any terminal to case, t = 1 min
TC = 25 °C
TC = 85 °C
MAX.
600
265
200
400
400
400
± 20
2500
625
325
UNITS
V
A
V
W
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coeff. of threshold voltage
Forward transconductance
Collector to emitter leakage current
VBR(CES)
VCE(on)
VGE(th)
ΔVGE(th)/ΔTJ
gfe
ICES
Diode forward voltage drop
VFM
Gate to emitter leakage current
IGES
VGE = 0 V, IC = 1 mA
VGE = 15 V, IC = 200 A
VGE = 15 V, IC = 200 A, TJ = 125 °C
IC = 0.25 mA
VCE = VGE, IC = 0.25 mA
VCE = 20 V, IC = 200 A
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 125 °C
IC = 200 A, VGE = 0 V
IC = 200 A, VGE = 0 V, TJ = 125 °C
VGE = ± 20 V
MIN.
600
-
-
3
-
-
-
-
-
-
-
TYP.
-
1.74
1.79
4.4
- 11
220
0.014
-
4.2
4.4
-
MAX.
-
2.2
2.25
6
-
-
1
10
6.0
6.2
± 250
UNITS
V
mV/°C
S
mA
V
nA
Document Number: 94545
Revision: 04-May-10
For technical questions, contact: indmodules@vishay.com
www.vishay.com
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