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DG408LE Datasheet, PDF (6/18 Pages) Vishay Siliconix – 8-Ch / Dual 4-Ch High Performance Analog Multiplexers
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DG408LE, DG409LE
Vishay Siliconix
SPECIFICATIONS (Single Supply 5 V)
PARAMETER
SYMBOL
Analog Switch
Analog Signal Range e
Drain-Source
On-Resistance
RDS(on) Matching Between
Channels g
On-Resistance Flatness
Switch Off Leakage
Current a
VANALOG
RDS(on)
RDS
RFLAT(on)
IS(off)
ID(off)
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 5 V, ± 10 %, V- = 0 V
VEN = 0.6 V or 2.4 V f
V+ = 4.5 V, VD or VS = 1 V or 3.5 V,
IS = 5 mA
V+ = 4.5 V, VD = 1 V or 3.5 V,
IS = 5 mA
V+ = 5.5 V, VS = 1 V or 4 V
VD = 4 V or 1 V
TEMP. b
Full
Room
Full
Room
Room
Room
Full
Room
Full
TYP. d
-
28
-
1
-
-
-
-
-
D SUFFIX
-40 °C to +85 °C
MIN. c MAX. c
0
5
-
36
-
41
-
3
-
4
-1
1
-5
5
-1
1
-5
5
UNIT
V

nA
Channel On Leakage
Current a
ID(on)
V+ = 5.5 V, VD = VS = 1 V or 4 V
sequence each switch on
Room
Full
-
-
-1
-5
1
5
Digital Control
Logic High Input Voltage
VINH
Logic Low Input Voltage
VINL
Input Current a
IIN
Dynamic Characteristics
V+ = 5 V
VAX = VEN = 2.4 V or 0.6 V
Full
-
2.4
-
V
Full
-
-
0.6
Full
-
-1
1
μA
Transition Time
VS1 = 3.5 V, VS8 = 0 V, (DG408LE)
Room
113
-
135
tTRANS
VS1b = 3.5 V, VS4b = 0 V, (DG409LE)
see figure 2
Full
-
-
165
Break-Before-Make Time
tOPEN
VS(all) = VDA = 3.5 V,
see figure 4
Room
75
1
Full
-
-
-
-
ns
Room
77
-
89
Enable Turn-On Time
tON(EN)
VAX = 0 V, VS1 = 3.5 V (DG408LE)
Full
-
-
110
Enable Turn-Off Time
tOFF(EN)
VAX = 0 V, VS1b = 3.5 V (DG409LE)
see figure 3
Room
Full
43
-
-
-
50
53
Charge Injection e (DG408LE)
Room
-2
-
Q
Charge Injection e (DG409LE)
CL = 1 nF, RGEN = 0 , VGEN = 2.5 V
Room
-2
-
-
pC
-
Off Isolation e, h (DG408LE)
Off Isolation e, h (DG409LE)
Crosstalk e (DG408LE)
Crosstalk e (DG409LE)
OIRR
XTALK
f = 100 kHz, RL = 50 
Room
-100
-
Room
-83
-
Room
-101
-
Room
-108
-
-
-
dB
-
-
Source Off Capacitance e
(DG408LE)
Source Off Capacitance e
(DG409LE)
CS(off)
f = 1 MHz, VS = 0 V, VEN = 0 V
Room
6.5
Room
6.5
-
-
Drain Off Capacitance e
(DG408LE)
Drain Off Capacitance e
(DG409LE)
CD(off)
f = 1 MHz, VD = 0 V, VEN = 0 V
Room
30
Room
16
-
-
Drain On Capacitance e
(DG408LE)
Drain On Capacitance e
(DG409LE)
CD(on)
f = 1 MHz, VD = 0 V, VEN = 2.4 V
Room
40
Room
26.5
-
-
-
-
-
pF
-
-
-
Notes
a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. RDS(on) = RDS(on) max. - RDS(on) min.
h. Worst case isolation occurs on channel 4 do to proximity to the drain pin.
S16-0389-Rev.A, 07-Mar-16
6
Document Number: 78084
For technical questions, contact: analogswitchsupport@vishay.com
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