DG211B_11 Datasheet, PDF (6/13 Pages) Vishay Siliconix – Improved Quad CMOS Analog Switches

DG211B, DG212B
Vishay Siliconix
TEST CIRCUITS
V_S = + 2 V
3V
+ 15 V
V+
S
D
IN
GND
V-
- 15 V
V_O = V_S
3V
Logic
Input
V_O
0V
R_L
1 kΩ
C_L
35 pF
Switch
Output
V_O
R_L
R_L + r_DS(on)
Figure 2. Switching Time
50 %
t_r < 20 ns
t_f < 20 ns
t_OFF
90 %
t_ON
+ 15 V
C
V+
V_S
S
D
V_O
R_g = 50 Ω
IN
R_L
0V, 2.4 V
GND
V-
C
V_S
Off Isolation = 20 log
V_O
- 15 V
Figure 3. Off Isolation
C
+ 15 V
V+
V_S
S₁
D₁
R_g = 50 Ω
IN₁
0 V, 2.4 V
S₂
D₂
NC
IN₂
0 V, 2.4 V
C = RF bypass
V_S
X_TALK Isolation = 20 log
V_O
GND
V-
C
- 15 V
50 Ω
V_O
R_L
Figure 4. Channel-to-Channel Crosstalk
R_g
V_g
3V
+ 15 V
V+
S
D
IN
GND
V-
- 15 V
V_O
C_L
1000 pF
ΔV_O
V_O
IN_X ON
OFF
ON
ΔV_O = measured voltage error due to charge injection
The charge injection in coulombs is Q = C_L x ΔV_O
Figure 5. Charge Injection
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Document Number: 70040
S11-0179-Rev. J, 07-Feb-11