DG211B_11 Datasheet, PDF (2/13 Pages) Vishay Siliconix – Improved Quad CMOS Analog Switches

DG211B, DG212B
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
Package
16-Pin Plastic DIP
- 40 °C to 85 °C
16-Pin Narrow SOIC
16-Pin TSSOP
Standard Part Number
DG211BDJ
DG212BDJ
DG211BDY
DG211BDY-T1
DG212BDY
DG212BDY-T1
DG211BDQ
DG211BDQ-T1
DG212BDQ
DG212BDQ-T1
Lead (Pb)-free Part Number
DG211BDJ-E3
DG212BDJ-E3
DG211BDY-E3
DG211BDY-T1-E3
DG212BDY-E3
DG212BDY-T1-E3
DG211BDQ-E3
DG211BDQ-T1-E3
DG212BDQ-E3
DG212BDQ-T1-E3
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Limit
Unit
Voltages Referenced, V+ to V-
44
GND
Digital Inputs^a, V_S, V_D
25
V
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
Current (Any terminal)
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.)
30
mA
100
Storage Temperature
- 65 to 125
°C
Power Dissipation (Package)^b
16-Pin Plastic DIP^c
16-Pin Narrow SOIC and TSSOP^d
470
640
mW
Notes:
a. Signals on S_X, D_X, or IN_X exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
SCHEMATIC DIAGRAM (Typical Channel)
V+
V_L
IN_X
GND
V-
www.vishay.com
2
Level
Shift/
Drive
Figure 1.
S_X
V-
V+
D_X
Document Number: 70040
S11-0179-Rev. J, 07-Feb-11