DG211B Datasheet, PDF (6/8 Pages) Vishay Siliconix – Improved Quad CMOS Analog Switches

DG211B/212B
Vishay Siliconix
TEST CIRCUITS
V_S = +2 V
3V
+15 V
V+
S
D
IN
GND
V–
R_L
1 kW
V_O
C_L
35 pF
–15 V
V_O = V_S
R_L
R_L + r_DS(on)
3V
Logic
Input
0V
Switch
Output
V_O
FIGURE 2. Switching Time
50%
90%
t_r <20 ns
t_f <20 ns
t_OFF
t_ON
+15 V
C
V+
V_S
S
D
V_O
R_g = 50 W
IN
R_L
0V, 2.4 V
GND
V–
C
V_S
Off Isolation = 20 log
V_O
–15 V
FIGURE 3. Off Isolation
C
+15 V
V+
V_S
S₁
D₁
R_g = 50 W
IN₁
0V, 2.4 V
S₂
D₂
NC
0V, 2.4 V
IN₂
C = RF bypass
V_S
X_TALK Isolation = 20 log
V_O
GND
V–
C
–15 V
50 W
V_O
R_L
FIGURE 4. Channel-to-Channel Crosstalk
R_g
V_g
3V
+15 V
V+
S
D
IN
GND
V–
–15 V
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4-6
V_O
C_L
1000 pF
DV_O
V_O
IN_X ON
OFF
ON
DV_O = measured voltage error due to charge injection
The charge injection in coulombs is Q = C_L x DV_O
FIGURE 5. Charge Injection
Document Number: 70040
S-00788—Rev. H, 24-Apr-00