DG211B Datasheet, PDF (4/8 Pages) Vishay Siliconix – Improved Quad CMOS Analog Switches

DG211B/212B
Vishay Siliconix
SPECIFICATIONS FOR SINGLE SUPPLY
Parameter
Analog Switch
Analog Signal Range^d
Drain-Source On-Resistance
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V– = 0 V
V_L = 5 V, V_IN = 2.4 V, 0.8 V^e
Temp^a
D Suffix
–40 to 85_C
Min^b Typ^c Max^b
Unit
V_ANALOG
r_DS(on)
V_D = 3 V, 8 V, I_S = 1 mA
Full
0
Room
Full
12
V
90
160
200
W
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Power Supply
t_ON
t_OFF
Q
V_S = 8 V
See Figure 2
C_L = 1 nF, V_gen= 6 V, R_gen = 0 W
Room
Room
Room
300
ns
200
4
pC
Positive Supply Current
I+
Negative Supply Current
I–
Logic Supply Current
I_L
Power Supply Range for
Continuous Operation
V_OP
V_IN = 0 or 5 V
Room
Full
Room
Full
Room
Full
Full
–10
–50
)4.5
10
50
mA
10
50
)25
V
Notes:
a. Room = 25_C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production test.
e. V_IN = input voltage to perform proper function.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r_DS(on) vs. V_D and Power Supply Voltages
110
100
90
"5 V
80
70
60
"10 V
50
"15 V
40
"20 V
30
20
10
–20 –16 –12 –8 –4 0 4 8
V_D – Drain Voltage (V)
12 16 20
r_DS(on) vs. V_D and Temperature
100
V+ = 15 V
90
V– = –15 V
80
70
60
125_C
50
85_C
40
25_C
30
–55_C
20
10
0
–15 –10
–5
0
5
10
15
V_D – Drain Voltage (V)
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Document Number: 70040
S-00788—Rev. H, 24-Apr-00