BFQ81 Datasheet, PDF (6/11 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications)

BFQ81
Vishay Semiconductors
V_CE/V
10
I_C/mA
20
f/MHz
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
S11
LIN
MAG
ANG
deg
0.349
-99.0
0.259
-127.9
0.215
-157.9
0.208
-170.0
0.209
176.9
0.222
163.8
0.241
152.4
0.256
145.9
0.275
139.7
0.304
131.6
0.332
123.7
0.364
118.7
0.465
-63.2
02.49
-121.5
0.201
-148.9
0.189
-174.5
0.188
175.6
0.189
166.4
0.206
155.9
0.226
147.1
0.244
141.7
0.2.64
135.4
0.297
128.6
0.322
123.2
0.351
118.2
S21
LIN
MAG
ANG
deg
11.39
109.9
7.34
96.4
4.79
84.5
3.92
79.0
3.32
73.5
2.75
66.3
2.34
59.4
2.15
55.5
2.01
51.9
1.82
45.8
1.68
39.5
1.56
65.7
27.66
133.0
12.49
102.6
7.77
91.7
4.99
81.4
4.07
76.6
3.44
71.5
2.84
65.0
2.42
58.4
2.22
54.7
2.07
51.0
1.88
45.2
1.73
39.3
1.61
35.3
S12
LIN
MAG
ANG
deg
0.037
63.8
0.052
67.2
0.075
70.7
0.092
71.8
0.109
72.0
0.134
71.9
0.161
71.6
0.180
70.7
0.198
69.6
0.225
68.4
0.252
66.3
0.268
64.6
0.015
68.1
0.033
70.3
0.050
73.6
0.076
75.2
0.094
75.3
0.112
74.7
0.138
73.7
0.165
72.6
0.184
71.4
0.203
70.3
0.230
68.4
0.257
66.0
0.274
64.2
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
S22
LIN
MAG
ANG
deg
0.605
-20.5
0.541
-17.1
0.523
-15.7
0.524
-16.5
0.523
-18.0
0.520
-21.2
0.517
-24.9
0.514
-27.7
0.508
-30.6
0.502
-35.6
0.481
-40.7
0.467
-43.8
0.762
-20.1
0.541
-17.3
0.509
-13.6
0.506
-12.7
0.511
-13.9
0.511
-15.9
0.510
-19.4
0.507
-23.3
0.504
-26.2
0.499
-28.9
0.492
-34.3
0.470
-39.5
0.453
-42.8
300
250
200
150
100
50
0
0
96 12159
20 40 60 80 100 120 140 160
T_amb - Ambient Temperature (°C)
Figure 1. Total Power Dissipation vs. Ambient Temperature
7000
6000
5000
V_CE = 10 V
5V
4000
3000
1V
2000
1000
f = 500 MHz
0
0 5 10 15 20 25 30
12871
I_C - Collector Current ( mA )
Figure 2. Transition Frequency vs. Collector Current
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Document Number 85023
Rev. 1.6, 08-Sep-08