BFQ81 Datasheet, PDF (1/11 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications)

Not for new design, this product will be obsoleted soon
BFQ81
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Features
• Small feedback capacitance
• Low noise figure
• Low cross modulation
e3
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
RF amplifier up to 2 GHz, especially for mobile
telephone.
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Packaging Codes/Options:
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BFQ81
Ordering code
BFQ81-GS08
Marking
RA
1
2
3
18991
Electrostatic sensitive device.
Observe precautions for handling.
Remarks
Tape and Reel
Package
SOT-23
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
V_CBO
25
V
V_CEO
16
V
V_EBO
2
V
I_C
30
mA
P_tot
200
mW
T_j
150
°C
T_stg
- 65 to + 150
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
1)
R_thJA
450
K/W
1) _{on glass fibre printed board (25 x 20 x 1.5) mm}3 _{plated with 35 μm Cu}
Document Number 85023
Rev. 1.6, 08-Sep-08
www.vishay.com
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