VS-VSKT570-18PBF Datasheet, PDF (5/8 Pages) Vishay Siliconix – High surge capability

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VS-VSKT570-18PbF
Vishay Semiconductors
900
800
700
ØØ
600 _{Conduction angle}
500
180°
120°
90°
60°
30°
400
300
200
100
0
0
VSKT570-18PbF
per module
T_J = 135 °C
100 200 300 400 500 600 700 800 900
Total RMS Output Current (A)
900
800
R
700
500
500
400
00.3.02K.10K/2.W0/W9K/KW^{th/SWA = 0.07 K/W}
300
00.5.4KK/W/W
200 ^0.6 K/W
100
0
0
20
40
60
80 100 120
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
10 000
T_J = 25 °C
T_J = 135 °C
0.1
VSKT570-18PbF
per junction
1000
0.01
VSKT570-18PbF
per junction
100
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Instantaneous On-State Voltage (V)
Fig. 8 - On-State Voltage Drop Characteristics
Steady state value
R_thJC = 0.065 K/W
(DC operation)
0.001
0.001 0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance Z_thJC Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω;
t_r ≤ 1 µs
10
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
t_r ≤ 1 µs
(a)
(b)
(1) P_GM = 10 W, t_p = 4 ms
(2) P_GM = 20 W, t_p = 2 ms
(3) P_GM = 40 W, t_p = 1 ms
(4) P_GM = 60 W, t_p = 0.66 ms
1
0.1
0.001
V_GD
I_GD
0.01
(1) (2) (3) (4)
VSK.570-18PbF
Frequency limited by P_G(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 10 - Gate Characteristics
1000
Revision: 01-Dec-16
5
Document Number: 93281
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