VS-VSKT570-18PBF Datasheet, PDF (4/8 Pages) Vishay Siliconix – High surge capability

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140
VSKT570-18PbF
130
R_thJC = 0.065 K/W
120
110
Ø
100
Conduction angle
90
80 _180°
120°
70
90°
60
60°
30°
50
0
100 200 300 400 500 600 700
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
140
VSKT570-18PbF
130
R_thJC = 0.065 K/W
120
110
Ø
100
Conduction period
90
80
70
60
50
0
DC
180°
120°
90°
60°
30°
100 200 300 400 500 600 700 800 900
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
1000
900
800
700
600
500
400
300
200
100
0
0
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction angle
VSKT570-18PbF
T_J = 135 °C
100 200 300 400 500 600
Average On-State Current (A)
Fig. 3 - On-State Power Loss Characteristics
VS-VSKT570-18PbF
Vishay Semiconductors
1200
180°
120°
1000
90°
60°
DC
800
30°
600
RMS limit
400
200
0
0
Ø
Conduction period
VSKT570-18PbF
T_J = 135 °C
100 200 300 400 500 600 700 800 900
Average On-State Current (A)
Fig. 4 - On-State Power Loss Characteristics
16 000
15 000
14 000
13 000
At any rated load condition and with
rated V_RRM applied following surge.
Initial T_J = 135 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
12 000
11 000
10 000
9000
8000
VSKT570-18PbF
7000
per junction
1
10
100
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
18 000
16 000
14 000
12 000
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial T_J = 135 °C
No voltage reapplied
Rated V_RRM reapplied
10 000
8000
VSKT570-18PbF
6000
per junction
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 01-Dec-16
4
Document Number: 93281
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