VS-SD553CS50L Datasheet, PDF (5/8 Pages) Vishay Siliconix – High voltage ratings up to 4500 V

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1 0 .5
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
4
10
SD 5 5 3 C ..S5 0 L Se rie s
T_J = 1 2 5 ° C ; V _r > 1 0 0 V
I _FM = 1500 A
Sin e Pu lse
1000 A
500 A
1 00
10 0 0
Rate O f Fa ll O f Forw ard Current - d i/dt ( A/µs)
Fig. 12 - Recovery Time Characteristics
25 0 0
20 0 0
15 0 0
I _FM= 1500 A
Sine Pulse
1000 A
500 A
10 0 0
50 0
0
0
SD 553C ..S5 0L S eries
T_J = 1 2 5 °C ; V _r > 1 0 0 V
50 100 150 200 250 300
Rate O f Fall O f Fo rward C urre nt - di/dt ( A/µs)
Fig. 13 - Recovery Charge Characteristics
8 00
I _FM = 1 5 00 A
7 00
Sin e Pulse
1000 A
6 00
500 A
5 00
4 00
3 00
2 00
1 00
0
0
SD 5 5 3 C ..S5 0 L S e r ie s
T_J = 1 2 5 °C ; V r > 1 0 0 V
50 100 150 200 250 300
R ate O f Fall O f Fo rwa rd Current - di/dt (A /µs)
Fig. 14 - Recovery Current Characteristics
VS-SD553C..S50L Series
Vishay Semiconductors
1E4
10 joules per pulse
6
4
2
1
0 .8
1E3
0 .6
0.4
0 .2
1E2
1E1
SD 553C ..S50L S eri es
Sinu soid al Pu lse
TJ = 1 25° C , V RRM= 1 5 0 0 V
tp
d v/d t = 1000V/ µ s
1E2
1E 3
Pulse Basewidth (µs)
1E 4
Fig. 15 - Maximum Total Energy Loss
Per Pulse Characteristics
1E 4
1E 3
1000 ^{600 400 200 100}
1 50 0
2000
50 Hz
3000
4 00 0
6000
10 0 0 0
S D 55 3 C..S5 0 L Se rie s
Sinu soid al Pu ls e
T_C = 5 5°C , V _RRM = 1 5 0 0 V
tp
d v/dt = 1000V/us
1E 2
1E1
1E 2
1E3
1E 4
Pulse Basew idth (µs)
Fig. 16 - Frequency Characteristics
1E4
tp
1E3
SD 5 5 3 C.. S5 0 L Se rie s
Sin uso id al Pu ls e
TJ = 1 25°C , V RRM = 15 0 0 V
d v/ d t = 1 0 0 0 V/ µ s
10 jo ules pe r p ulse
8
6
4
2
1
0.8
0 .6
0.4
1E2
1E1
1E 2
1E 3
1E 4
Pulse Basewidth (µs)
Fig. 17 - Maximum Total Energy Loss
Per Pulse Characteristics
Revision: 04-Apr-14
5
Document Number: 93177
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