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| VS-SD553CS50L Datasheet, PDF (2/8 Pages) Vishay Siliconix – High voltage ratings up to 4500 V | |||
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www.vishay.com
VS-SD553C..S50L Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current ï
at heatsink temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I2t for fusing
Maximum I2ït for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forwardï
slope resistance
High level value of forwardï
slope resistance
Maximum forward voltage drop
SYMBOL
IF(AV)
IF(RMS)
IFSM
I2t
I2ït
VF(TO)1
VF(TO)2
rf1
rf2
VFM
TEST CONDITIONS
180° conduction, half sine waveï
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
No voltage ï
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
50 % VRRMï
reapplied
No voltage ï
reapplied
Sinusoidal half wave,ï
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
50 % VRRMï
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x ï° x IF(AV) < I < ï° x IF(AV)), TJ = TJ maximum
(I > ï° x IF(AV)), TJ = TJ maximum
(16.7 % x ï° x IF(AV) < I < ï° x IF(AV)), TJ = TJ maximum
(I > ï° x IF(AV)), TJ = TJ maximum
Ipk = 1500 A, TJ =125 °C, tp = 10 ms sinusoidal wave
VALUES
560 (210)
55 (85)
1120
12 000
12 570
10 100
10 570
721
658
510
466
7210
1.77
1.95
0.98
0.89
3.24
UNITS
A
°C
A
kA2s
kA2ïs
V
mW
V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C
trr AT 25 % IRRM
(μs)
TEST CONDITIONS
Ipk
SQUARE dI/dt
Vr
PULSE (A/μs) (V)
(A)
S50
5.0
1000
100
- 50
TYPICAL VALUES
AT TJ = 125 °C
trr AT 25 % IRRM Qrr
Irr
(μs)
(μC)
(A)
6.0
900
250
IFM
trr
dir
t
dt
Qrr
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operatingï
temperature range
TJ
Maximum storage temperature range
Maximum thermal resistance,ï
junction to heatsink
TStg
RthJ-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
Conforms to JEDEC
VALUES
UNITS
- 40 to 125
°C
- 40 to 150
0.073
K/W
0.031
14 700
N
(1500)
(kg)
255
g
DO-200AB (B-PUK)
ïRthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
180°
0.009
0.009
120°
0.011
0.011
90°
0.014
0.014
60°
0.020
0.020
30°
0.036
0.036
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
0.006
0.006
0.011
0.011
0.015
0.015
0.021
0.021
0.036
0.036
TEST CONDITIONS
TJ = TJ maximum
UNITS
K/W
Note
⢠The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 04-Apr-14
2
Document Number: 93177
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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