VS-GB300TH120U Datasheet, PDF (5/7 Pages) Vishay Siliconix – VCE(on) with positive temperature coefficient

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VS-GB300TH120U
Vishay Semiconductors
24
21
18
15
E_rec
12
9
6
V_CC = 600 V
I_C = 300 A
3
V_GE = - 15 V
T_J = 125 °C
0
0
5 10 15 20 25 30 35
R_g (Ω)
Fig. 9 - Diode Switching Loss vs. Gate Resistance
1
Diode
0.1
0.01
0.001
0.001
0.01
0.1
1
10
t (s)
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
Dimensions
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www.vishay.com/doc?95525
Revision: 12-Jun-15
5
Document Number: 94751
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