VS-GB300TH120U Datasheet, PDF (3/7 Pages) Vishay Siliconix – VCE(on) with positive temperature coefficient

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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature range
T_J
Storage temperature range
T_STG
Junction to case
IGBT
Diode
R_thJC
Case to sink
R_thCS
Conductive grease applied
Mounting torque
Power terminal screw: M6
Mounting screw: M6
Weight
VS-GB300TH120U
Vishay Semiconductors
MIN. TYP. MAX. UNITS
-
-
150
°C
-40
-
125
-
- 0.059
-
- 0.107 K/W
- 0.035 -
2.5 to 5.0
Nm
3.0 to 6.0
300
g
600
500
400
25 °C
300
125 °C
200
100
V_GE = 15 V
0
0
1
2
3
4
5
6
V_CE (V)
Fig. 1 - IGBT Typical Output Characteristics
600
V_CE = 20 V
500
400
300
125 °C
200
25 °C
100
0
5
6
7
8
9
10 11
V_GE (V)
Fig. 2 - IGBT Typical Transfer Characteristics
100
90
80
70
60
50
40
30
20
10
0
0
V_CC = 600 V
R_g = 3.3 Ω
V_GE = ± 15 V
T_J = 125 °C
E_on
E_off
100 200 300 400 500 600
I_C (A)
Fig. 3 - IGBT Switching Loss vs. I_C
180
160
V_CC = 600 V
140
I_C = 600 A
V_GE = ± 15 V
120
T_J = 125 °C
100
80
E_on
60
E_off
40
20
0
0 5 10 15 20 25 30 35
R_g (Ω)
Fig. 4 - IGBT Switching Loss vs. R_g
Revision: 12-Jun-15
3
Document Number: 94751
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