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VS-GB300LH120N Datasheet, PDF (5/7 Pages) Vishay Siliconix – Low inductance case
www.vishay.com
25
20
15
Erec
10
VCC = 600 V
IC = 300 A
5
VGE = - 15 V
TJ = 125 °C
0
0
10
20
30
40
50
Rg (Ω)
Fig. 9 - Diode Switching Loss vs. Rg
100
VS-GB300LH120N
Vishay Semiconductors
10-1
Diode
10-2
10-3
10-3
10-2
10-1
10-0
10-1
t (s)
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95525
Revision: 12-Jun-15
5
Document Number: 94784
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000