VS-GB300LH120N Datasheet, PDF (4/7 Pages) Vishay Siliconix – Low inductance case

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VS-GB300LH120N
Vishay Semiconductors
700
600
I_C, Module
500
400
300
200
R_g = 4.7 Ω
100
V_GE = ± 15 V
T_J = 125 °C
0
0
300
600
900
V_CE (V)
Fig. 5 - RBSOA
1200
1500
10^-1
IGBT
10^-2
10^-3
10^-3
10^-2
10^-1
10⁰
10¹
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
600
500
25 °C
400
300
125 °C
200
100
0
0
0.5 1
1.5
2
2.5
3
V_F (V)
Fig. 7 - Diode Typical Forward Characteristics
40
35
30
25
E_rec
20
15
10
5
0
0
V_CC = 600 V
R_g = 4.7 Ω
V_GE = - 15 V
T_J = 125 °C
100 200 300 400 500 600
I_F (A)
Fig. 8 - Diode Switching Loss vs. I_F
Revision: 12-Jun-15
4
Document Number: 94784
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