SUP90N08-8M2P Datasheet, PDF (5/6 Pages) Vishay Siliconix – N-Channel 75-V (D-S) MOSFET

SUP90N08-8m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
1000
100
Limited
by r_DS(on)*
0.1 s
10
1s
10 s
1
DC
0.1
10
0.000001 0.000010 0.0001
0.001
0.01
t_in (s)
Single Pulse Avalanche Current Capability vs. Time
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
T_C = 25 °C
Single Pulse
0.001
0.1
1
10
100
1000
* V_GS
V_DS - Drain-to-Source Voltage (V)
minimum V_GS at which r_DS(on) is specified
Safe Operating Area
0.01
10^-4
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69615.
Document Number: 69615
S-72504-Rev. A, 03-Dec-07
www.vishay.com
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