SUP90N08-8M2P Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 75-V (D-S) MOSFET

SUP90N08-8m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.5
1.0
2.0
ID = 30 A, V_GS = 10 V
1.5
1.0
0.5
0.5
0.0
- 0.5
- 1.0
- 1.5
I_D = 5 mA
I_D = 250 µA
0.0
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
10
I_D = 15 A
8
V_DS = 38 V
V_DS = 60 V
6
- 2.0
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Threshold Voltage
95
90
I_D = 250 µA
85
4
80
2
75
0
0
100
10
20
30
40
50
60
Q_g - Total Gate Charge (nC)
Gate Charge
10
T_J = 150 °C
1.0
0.1
0.01
T_J = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
70
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
120
100
80
60
40
20
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Maximum Drain Current vs. Case Temperature
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4
Document Number: 69615
S-72504-Rev. A, 03-Dec-07