SUP90N08-6M8P Datasheet, PDF (5/6 Pages) Vishay Siliconix – N-Channel 75-V (D-S) MOSFET

SUP90N08-6m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
155
1000
124
93
Package Limited
62
31
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Single Pulse Avalanche Current Capability vs. Time
1
Duty Cycle = 0.5
Limited by r_DS(on)*
100
100 µs
10
1 ms
1
T_C = 25 °C
Single Pulse
10 ms
100 ms
DC
0.1
0.1
* V_GS
1
10
100
V_DS - Drain-to-Source Voltage (V)
minimum V_GS at which r_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69538.
Document Number: 69538
S-72507-Rev. A, 03-Dec-07
www.vishay.com
5