SUP90N08-6M8P Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 75-V (D-S) MOSFET

SUP90N08-6m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
2.0
I_D = 50 A
8
V_DS = 30 V
1.7
I_D = 20 A
6
V_DS = 60 V
1.4
4
1.1
V_GS = 10 V
2
0.8
0
0
17
34
51
68
85
Q_g - Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
100
150 °C
10
1.0
25 °C
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Gate Charge
94
I_D = 1 mA
90
0.5
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Threshold Voltage
0.8
0.2
- 0.4
I_D = 5 mA
- 1.0
- 1.6
I_D = 250 µA
- 2.2
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
86
150 °C
25 °C
10
82
78
74
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Source-Drain Diode Forward Voltage
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4
1
0.00001 0.0001 0.001
0.01
0.1
1.0
T_AV (s)
Single Pulse Avalanche Current Capability vs.
Temperature
Document Number: 69538
S-72507-Rev. A, 03-Dec-07