SUP90N06-6M0P_09 Datasheet, PDF (5/7 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

SUP90N06-6m0P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
185
1000
Limited by R_DS(on)*
148
100
111
Package Limited
74
37
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Single Pulse Avalanche Current Capability vs. Time
1
Duty Cycle = 0.5
10
1 ms
10 ms
100 ms
DC
1
0.1
0.1
* V_GS
T_C = 25 °C
Single Pulse
1
10
100
V_DS - Drain-to-Source Voltage (V)
minimum V_GS at which R_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69536.
Document Number: 69536
S09-0703-Rev. B, 27-Apr-09
www.vishay.com
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