SUP90N06-6M0P_09 Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

SUP90N06-6m0P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
2.0
I_D = 50 A
8
V_DS = 15 V
1.7
V_DS = 30 V
6
V_DS = 45 V
1.4
I_D = 20 A
4
1.1
V_GS = 10 V
2
0.8
0
0
17
34
51
68
85
Q_g - Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
100
10
150 °C
0.5
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Threshold Voltage
0.8
0.2
1.0
0.1
0.01
25 °C
- 0.4
- 1.0
- 1.6
I_D = 5 mA
I_D = 250 µA
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Gate Charge
76
I_D = 1 mA
73
70
67
64
61
58
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Source-Drain Diode Forward Voltage
- 2.2
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
150 °C
25 °C
10
1
0.00001 0.0001 0.001
0.01
0.1
1.0
T_AV (s)
Maximum Drain Current vs. Case Temperature
www.vishay.com
4
Document Number: 69536
S09-0703-Rev. B, 27-Apr-09