SUP60N02-4M5P Datasheet, PDF (5/6 Pages) Vishay Siliconix – N-Channel 20-V (D-S) 175 °C MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
150
1000
SUP60N02-4m5P
Vishay Siliconix
120
90
Package Limited
60
30
0
0
25 50 75 100 125 150 175
T_A - Ambient Temperature (°C)
Drain Current vs. Ambient Temperature
1
Duty Cycle = 0.5
Limited by r_DS(on)*
100
10
10 µs, 100 µs
1 ms
10 ms
100 ms
1 s, 10 s
1
0.1
0.1
T_A = 25 °C
Single Pulse
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which r_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69821.
Document Number: 69821
S-80182-Rev. A, 04-Feb-08
www.vishay.com
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