SUP60N02-4M5P Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 20-V (D-S) 175 °C MOSFET

SUP60N02-4m5P
Vishay Siliconix
N-Channel 20-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
r_DS(on) (Ω)
0.0045 at V_GS = 10 V
20
0.0065 at V_GS = 4.5 V
I_D (A)^a
60
60
TO-220AB
FEATURES
• TrenchFET^® Power MOSFET
• 175 °C Junction Temperature
• 100 % R_g Tested
• 100 % UIS Tested
APPLICATIONS
• OR-ing
D
RoHS
COMPLIANT
DRAIN connected to TAB
G
GD S
Top View
Ordering Information: SUP60N02-4m5P-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 175 °C)
T_C = 25 °C
T_C = 100 °C
I_D
Pulsed Drain Current
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation^b
T_C = 25 °C
T_A = 25 °C^d
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)^d
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Symbol
R_thJA
R_thJC
S
N-Channel MOSFET
Limit
20
± 20
60^a
60^a
120
50
125
120^c
3.75
- 55 to 175
Limit
40
1.25
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 69821
S-80182-Rev. A, 04-Feb-08
www.vishay.com
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