SUM75N15-18P Datasheet, PDF (5/6 Pages) Vishay Siliconix – N-Channel 150-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
400
350
80
300
Package Limited
60
250
200
40
150
100
20
50
0
0
0
25
50
75
100 125 150
0
T_C - Case Temperature (°C)
Current Derating*, Junction-to-Case
1
Duty Cycle = 0.5
SUM75N15-18P
Vishay Siliconix
25
50
75
100 125 150
T_J - Temperature (°C)
Power Derating*, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69995.
Document Number: 69995
S-82349-Rev. B, 22-Sep-08
www.vishay.com
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