SUM75N15-18P Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 150-V (D-S) MOSFET

SUM75N15-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
2.5
I_D = 85 A
8
V_DS = 75 V
2.0
6
V_DS = 120 V
1.5
4
1.0
2
I_D = 20 A
V_GS = 10 V
0
0
0.8
20
40
60
80
Q_g - Total Gate Charge (nC)
Gate Charge
0.2
- 0.4
I_D = 1 mA
- 1.0
- 1.6
- 50 - 25
I_D = 250 µA
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
T_J = 150 °C
10
T_J = 25 °C
1
0.1
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
190
I_D = 1 mA
180
170
160
150
140
- 50 - 25 0
25 50 75 100 125 150
T_J - Temperature (°C)
Drain-Source Breakdown vs. Junction Temperature
1000
100
Limited by R_DS(on)*
10 µs
100 µs
10
1 ms
10 ms
100 ms, DC
1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.1
T_C = 25 °C
Single Pulse
0.01
0.1
1.0
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
www.vishay.com
4
Document Number: 69995
S-82349-Rev. B, 22-Sep-08