SIR403EDP Datasheet, PDF (5/13 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by R_DS(on)*
10
1
0.1
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.001
T_A = 25 °C
Single Pulse
BVDSS Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
80
60
40
20
0
0
70
2.4
SiR403EDP
Vishay Siliconix
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
56
1.8
42
1.2
28
0.6
14
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Junction-to-Case
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power Junction-to-Ambient
* The power dissipation P_D is based on T_J(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 66744
For technical questions, contact: [e-mail]
www.vishay.com
S13-0302-Rev. A, 11-Feb-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000