SIJ494DP Datasheet, PDF (5/7 Pages) Vishay Siliconix – N-Channel 150 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
45
10000
36
1000
27
18
100
9
0
10
0
25 50 75 100 125 150
T_C - Case Temperature (°C)
2nd line
Current Derating ^a
SiJ494DP
Vishay Siliconix
Axis Title
100
10000
Axis Title
2.5
10000
80
2.0
1000
1000
60
1.5
40
1.0
100
100
20
0.5
0
10
0
25 50 75 100 125 150
T_C - Case Temperature (°C)
2nd line
Power, Junction-to-Case
0
10
0
25 50 75 100 125 150
T_A - Ambient Temperature (°C)
2nd line
Power, Junction-to-Ambient
Note
a. The power dissipation P_D is based on T_J (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1734-Rev. A, 29-Aug-16
5
Document Number: 79056
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000