SIHB22N60S-E3 Datasheet, PDF (5/7 Pages) Vishay Siliconix – S Series Power MOSFET

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SiHB22N60S
Vishay Siliconix
25
20
15
10
5
0
25
50
75
100
125
150
T_C, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
Duty Cycle = 0.5
725
700
675
650
625
600
575
550
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180
T_J, Junction Temperature (°C)
Fig. 10 - Drain-to-Source Breakdown Voltage
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
0.1
1
Square Wave Pulse Duration (s)
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
V_DS
V_GS
R_g
R_D
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- _VDD
V_DS
Vary t_p to obtain
required I_AS
R_g
10 V
t_p
L
D.U.T
I_AS
0.01 W
+
- ^{V DD}
Fig. 11a - Switching Time Test Circuit
V_DS
90 %
Fig. 12a - Unclamped Inductive Test Circuit
V_DS
t_p
V_DD
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 11b - Switching Time Waveforms
V_DS
I_AS
Fig. 12b - Unclamped Inductive Waveforms
S11-1882-Rev. E, 26-Sep-11
5
Document Number: 91395
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