SIHB22N60S-E3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – S Series Power MOSFET

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SiHB22N60S
Vishay Siliconix
S Series Power MOSFET
PRODUCT SUMMARY
V_DS at T_J max. (V)
R_DS(on) max. at 25 °C ()
Q_g max. (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
650
V_GS = 10 V
98
17
25
Single
0.190
D²PAK (TO-263)
D
GD
S
G
S
N-Channel MOSFET
FEATURES
• Generation One
• Halogen-free According to IEC 61249-2-21
Definition
• High E_AR Capability
• Lower Figure-of-Merit R_on x Q_g
• 100 % Avalanche Tested
• Ultra Low R_on
• dV/dt Ruggedness
• Ultra Low Gate Charge (Q_g)
• Compliant to RoHS Directive 2002/95/EC
Note
* Pb containing terminations are not RoHS compliant, exemptions
may apply
APPLICATIONS
• PFC Power Supply Stages
• Hard Switching Topologies
• Solar Inverters
• UPS
• Motor Control
• Lighting
• Server Telecom
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
D²PAK (TO-263)
SiHB22N60S-GE3
SiHB22N60S-E3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
V_GS
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
D²PAK
(TO-263)
Single Pulse Avalanche Energy^b
Repetitive Avalanche Energy^a
Maximum Power Dissipation
E_AS
E_AR
D²PAK
(TO-263)
P_D
Drain-Source Voltage Slope
Reverse Diode dV/dt^d
T_J = 125 °C
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^c
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 , I_AS = 7 A.
c. 1.6 mm from case.
d. I_SD  I_D, dI/dt = 100 A/μs, starting T_J = 25 °C.
S11-1882-Rev. E, 26-Sep-11
1
LIMIT
600
± 20
30
22
13
65
2
690
25
250
37
5.3
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
W
V/ns
°C
Document Number: 91395
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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