SIA910EDJ Datasheet, PDF (5/7 Pages) Vishay Siliconix – Dual N-Channel 12-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
Limited by R_DS(on)*
10
100 µs
1
0.1
T_A = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1 s, 10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
15
8
SiA910EDJ
Vishay Siliconix
12
6
9
4
6
Package Limited
2
3
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65535
S09-2267-Rev. A, 02-Nov-09
www.vishay.com
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