SIA418DJ Datasheet, PDF (5/9 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
25
20
15
10
Package Limited
5
0
0
20
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
15
10
5
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Power, Junction-to-Case
SiA418DJ
Vishay Siliconix
* The power dissipation P_D is based on T_J(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63911
For technical questions, contact:: [e-mail]
www.vishay.com
S13-0462-Rev. C, 04-Mar-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000