SIA418DJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
10
V_GS = 10 V thru 4 V
32
8
SiA418DJ
Vishay Siliconix
24
6
16
V_GS = 3 V
8
0
0.0
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.025
0.022
0.019
V_GS = 4.5 V
0.016
0.013
V_GS = 10 V
0.010
0
8
16
24
32
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 12 A
8
V_DS = 15 V
6
V_DS = 7.5 V
4
V_DS = 24 V
2
0
0
2
4
6
8
10
12
Q_g - Total Gate Charge (nC)
Gate Charge
4
T_C = 25 °C
2
T_C = 125 °C
0
0.0
T_C = - 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
800
700
600
C_iss
500
400
300
200
C_oss
C_rss
100
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 9 A
1.6
1.4
1.2
V_GS = 10 V
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63911
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S13-0462-Rev. C, 04-Mar-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000