SI7655ADN Datasheet, PDF (5/9 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

Si7655ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
120
100
80
60
40
20
0
0
Package Limited
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
70
60
50
40
30
20
10
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power, Junction-to-Case
* The power dissipation P_D is based on T_J(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 63 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
Document Number: 62909
For technical questions, contact: [e-mail]
www.vishay.com
S13-2075-Rev. A, 30-Sep-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000