SI7655ADN Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

Si7655ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.020
T_J = 150 °C
10
0.016
0.012
I_D = 20 A
T_J = 25 °C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.008
0.004
0.000
0
T_J = 125 °C
T_J = 25 °C
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.9
100
0.8
80
0.7
60
0.6
I_D = 250 μA
40
0.5
0.4
20
0.3
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
1000
Limited by R_DS(on)*
100
10
1
0.1
T_A = 25 °C
100 us
1 ms
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 62909
4
S13-2075-Rev. A, 30-Sep-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000