SI7625DN Datasheet, PDF (5/7 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

New Product
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
Si7625DN
Vishay Siliconix
56
42
Package Limited
28
14
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
65
2.0
52
1.6
39
1.2
26
0.8
13
0.4
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65737
S10-0638-Rev. A, 22-Mar-10
www.vishay.com
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