SI7625DN Datasheet, PDF (4/7 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

New Product
Si7625DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
T_J = 150 °C
10
0.030
I_D = 15 A
0.024
1
T_J = 25 °C
0.018
0.1
0.012
T_J = 25 °C
0.01
0.006
T_J = 125 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
I_D = 250 μA
0.5
0.2
- 0.1
I_D = 5 mA
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
80
60
40
20
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Pulse (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
T_A = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
www.vishay.com
4
Document Number: 65737
S10-0638-Rev. A, 22-Mar-10