SI7623DN Datasheet, PDF (5/13 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Si7623DN
Vishay Siliconix
80
60
40
Limited by Package
20
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
65
2.0
52
1.6
39
1.2
26
0.8
13
0.4
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Derating, Junction-to-Case
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation P_D is based on T_J(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62668
For technical questions, contact: [e-mail]
www.vishay.com
S12-1764-Rev. A, 23-Jul-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000